Innodisk M4MS-8GS

M4MS-8GS1XC0J-B, M4MS-8GSSYC0J-E

DDR4

Produkt ist EOL (End Of Life)!

PRODUKT-FEATURES

MINI DIMM
DDR4
ECC
8 GB
[1Gx8 | 512Mx8]
-
1.2V

KONFIGURATION

Bitte konfigurieren Sie Ihr Wunschprodukt.
Standardkonfiguration Individualkonfiguration

PRODUKTPREIS

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PRODUKTINFORMATIONEN

Basismodul: Innodisk M4MS-8GS

Allgemein
	SKU / Artikelnummer			M4MS-8GSM4MS-8GS1XC0J-B, M4MS-8GSSYC0J-E
Produktgrunddaten
	Hersteller			Innodisk
System
	Speicher	Aufbau		288 Pin DIMM DDR4
		Memory Type		DDR4
		DIMM Type		Mini DIMM
		IC Data Rate		2400
		Kapazität		8 GB
		IC Brand		Samsung
		IC Organization		1Gx8, 512Mx8
		PCB S/N		X, Y
		Grade		Commercial
		CL		17
		DIMM Datarate		Original specification
		Die Version		B, E
		ECC		wird unterstützt
		Bestückung		Dual-Rank, Single-Rank
		tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS
			Temperaturbereich	0°C ~ 85°C
Stromversorgung
	Eingangsspannung			1.2V
Mechanik / Umgebung
	Temperatur	Betrieb		0° bis 85°C
		Lagerung		-50° bis 100°C
	Relative Luftfeuchtigkeit	Betrieb		10 bis 90%, nicht kondensierend
		Lagerung		5 bis 95%, nicht kondensierend
	Abmaße	Formfaktor		MINI DIMM
		Tiefe		80 mm
		Höhe		19 mm
Zertifikate / Konformitäten
	CE			Ja
	RoHS konform			Ja

End of Life (EOL)

Due to supply condition, Innodisk hereby to announce the product change plan for all of DDR4 2400 Samsung 512x8 E die IC assembled modules. Innodisk is going to process DDR4 2400 Samsung 512x8 E die IC product termination and running change to DDR4 2666 Samsung 512x8 F die IC product series. Include below products: DDR4 2400/2133 512x8 4GB/8GB DRAM Modules.
Revision:	20022701
Revision date:	27. Februar 2020
Last purchase date:	31. Mai 2020
Last shipping date:	31. August 2020
Betroffene Produkte:	M4MS-4GSS5C0J-E, M4MS-4GSSXC0J-E, M4US-8GSSW50J-E, M4CS-4GSSL50J-E, M4CS-4GSSL5RG-E, M4CS-4GSSLC0J-E, M4CS-4GSSLCRG-E, M4CS-4GSSSC0J-E, M4CS-4GSSSCRG-E, M4CS-8GSSM50J-E, M4CS-8GSSMC0J-E, M4CS-8GSSMCRG-E, M4CS-8GSSTC0J-E, M4CS-8GSSTCRG-E, M4DS-4GSSP50J-E, M4DS-4GSSP5RG-E, M4DS-4GSSPC0J-E, M4DS-4GSSPCRG-E, M4DS-8GSSQC0J-E, M4DS-8GSSQCRG-E, M4MS-8GSSYC0J-E, M4RS-4GSSA50J-E, M4RS-4GSSA5RG-E, M4RS-4GSSC50J-E, M4RS-4GSSC5RG-E, M4RS-8GSSB50J-E, M4RS-8GSSB5RG-E, M4RS-8GSSD50J-E, M4RS-8GSSD5RG-E, M4SS-4GSS3C0J-E, M4US-4GSSJ50J-E, M4US-4GSSJ5RG-E, M4US-4GSSVC0J-E, M4US-4GSSVCRG-E, M4US-8GSSK50J-E, M4US-8GSSK5RG-E, M4US-8GSSWC0J-E, M4US-8GSSWCRG-E
Hinweis Dokument:	PCN 20022701-DDR4 2400 Samsung 512Mx8 E die IC Product Change Notice.pdf
End of Life (EOL)

Key Characteristics of the Change: Due to supply condition, Innodisk hereby to announce the product change plan for all of DDR4 2400 Samsung 1Gx8 B die IC assembled modules Description: Innodisk is going to process DDR4 2400 Samsung 1Gx8 B die IC product termination and running change to DDR4 2666 Samsung 1Gx8 C die IC product series. Include products below: DDR4 2400/2133 1Gx8 8GB & 16GB DRAM Modules
Revision:	21121501
Revision date:	17. Dezember 2021
Last purchase date:	31. März 2022
Last shipping date:	30. Juni 2022
Betroffene Produkte:	M4CS-8GS1L50J-B, M4CS-8GS1L5RG-B, M4CS-8GS1LC0J-B, M4CS-8GS1LCRG-B, M4CS-8GS1SC0J-B, M4CS-8GS1SCRG-B, M4CS-AGS1M50J-B, M4CS-AGS1M5RG-B, M4CS-AGS1MC0J-B, M4CS-AGS1MCRG-B, M4CS-AGS1TC0J-B, M4CS-AGS1TCRG-B, M4DS-8GS1PC0J-B, M4DS-8GS1PCRG-B, M4DS-AGS1Q50J-B, M4DS-AGS1Q5RG-B, M4DS-AGS1QC0J-B, M4DS-AGS1QCRG-B, M4MS-8GS1XC0J-B, M4RS-8GS1A50J-B, M4RS-8GS1A5RG-B, M4RS-8GS1C50J-B, M4RS-8GS1C5RG-B, M4RS-8GS1CC0J-B, M4RS-8GS1CCRG-B, M4RS-AGS1B50J-B, M4RS-AGS1B5RG-B, M4RS-AGS1D50J-B, M4RS-AGS1D5RG-B, M4RS-AGS1DC0J-B, M4RS-AGS1DCRG-B, M4RS-BGS3G50J-B, M4RS-BGS3G5RG-B, M4SS-8GS13C0J-B, M4US-4GSX150J-B, M4US-4GSX15RG-B, M4US-4GSX1C0J-B, M4US-4GSX1CRG-B, M4US-8GS1J50J-B, M4US-8GS1J5RG-B, M4US-8GS1VC0J-B, M4US-8GS1VCRG-B, M4US-AGS1K50J-B, M4US-AGS1K5RG-B, M4US-AGS1WC0J-B, M4US-AGS1WCRG-B
Hinweis Dokument:	[PCN_21121501] DDR4 product change notice from Samsung 2400 1Gx8 B die IC to Samsung 2666 1Gx8 C die IC .pdf
Product Change Notification (PCN)

In an effort to expand Innodisk's DRAM product lines universal usability in applications and devices, Innodisk hereby announces a product change for DRAM modules that are ECC DIMM / RDIMM all product series of standard part numbers, and the DDR4 2933/3200 4/8GB 1 Rank SODIMM W/T of standard part numbers. The customized part numbers would not be impacted.
Revision:	20113001
Revision date:	1. Dezember 2020
Last purchase date:	1. März 2021
Last shipping date:	1. Juni 2021
Betroffene Produkte:	M4MS-AGS1YC0J-B, M4CS-8GS1L50J-B, M4CS-8GS1L5RG-B, M4CS-8GS1LC0J-B, M4CS-8GS1LCRG-B, M4CS-8GS1SC0J-B, M4CS-8GS1SCRG-B, M4CS-AGS1M50J-B, M4CS-AGS1M5RG-B, M4CS-AGS1MC0J-B, M4CS-AGS1MCRG-B, M4CS-AGS1TC0J-B, M4CS-AGS1TCRG-B, M4D0-4GSSPWEM, M4D0-4GSSPWIK, M4D0-4GSSPWRG, M4D0-4GSSPWSJ, M4D0-4GSSPWUN, M4D0-8GM1PWIK, M4D0-8GM1PWRG, M4D0-8GM1PWSJ, M4D0-8GS1PWEM, M4D0-8GS1PWIK, M4D0-8GS1PWRG, M4D0-8GS1PWSJ, M4D0-8GS1PWUN, M4D0-8GSSQWEM, M4D0-8GSSQWIK, M4D0-8GSSQWRG, M4D0-8GSSQWSJ, M4D0-8GSSQWUN, M4D0-AGS1QWEM, M4D0-AGS1QWIK, M4D0-AGS1QWRG, M4D0-AGS1QWSJ, M4D0-AGS1QWUN, M4DI-4GSSP50K-F, M4DI-4GSSP5RG-F, M4DI-4GSSP5SJ-F, M4DI-4GSSPC0K-F, M4DI-4GSSPCRG-F, M4DI-4GSSPCSJ-F, M4DI-4GSSPW0K-F, M4DI-4GSSPWRG-F, M4DI-4GSSPWSJ-F, M4DI-8GS1P50K-C, M4DI-8GS1P5RG-C, M4DI-8GS1P5SJ-C, M4DI-8GS1PC0K-C, M4DI-8GS1PCRG-C, M4DI-8GS1PCSJ-C, M4DI-8GS1PW0K-C, M4DI-8GS1PWRG-C, M4DI-8GS1PWSJ-C, M4DI-8GSSQ50K-F, M4DI-8GSSQ5RG-F, M4DI-8GSSQ5SJ-F, M4DI-8GSSQC0K-F, M4DI-8GSSQCRG-F, M4DI-8GSSQCSJ-F, M4DI-8GSSQW0K-F, M4DI-8GSSQWRG-F, M4DI-8GSSQWSJ-F, M4DI-AGS1Q50K-C, M4DI-AGS1Q5RG-C, M4DI-AGS1Q5SJ-C, M4DI-AGS1QC0K-C, M4DI-AGS1QCRG-C, M4DI-AGS1QCSJ-C, M4DI-AGS1QW0K-C, M4DI-AGS1QWRG-C, M4DI-AGS1QWSJ-C, M4DI-BGS2Q50K-A, M4DI-BGS2QC0K-A, M4DS-8GS1PC0J-B, M4DS-8GS1PCRG-B, M4DS-AGS1Q50J-B, M4DS-AGS1Q5RG-B, M4DS-AGS1QC0J-B, M4DS-AGS1QCRG-B, M4MS-8GS1XC0J-B, M4RS-8GS1A50J-B, M4RS-8GS1A5RG-B, M4RS-8GS1C50J-B, M4RS-8GS1C5RG-B, M4RS-8GS1CC0J-B, M4RS-8GS1CCRG-B, M4RS-AGS1B50J-B, M4RS-AGS1B5RG-B, M4RS-AGS1D50J-B, M4RS-AGS1D5RG-B, M4RS-AGS1DC0J-B, M4RS-AGS1DCRG-B, M4SE-4GSSN50M-F, M4SE-4GSSN5UN-F, M4SE-8GS1N50M-C, M4SE-8GS1N5UN-C, M4SE-8GSSO50M-F, M4SE-8GSSO5UN-F
Hinweis Dokument:	PCN 20113001- DDR4 EEPROM (with Thermal Sensor) product change notice.pdf
Product Change Notification (PCN)

Due to supply condition, Innodisk hereby to announce the product change plan for all of DDR4 2400 Samsung 512x8 E die IC assembled modules. Innodisk is going to process DDR4 2400 Samsung 512x8 E die IC product termination and running change to DDR4 2666 Samsung 512x8 F die IC product series. Include below products: DDR4 2400/2133 512x8 4GB/8GB DRAM Modules.
Revision:	20022701
Revision date:	27. Februar 2020
Last purchase date:	31. Mai 2020
Last shipping date:	31. August 2020
Betroffene Produkte:	M4MS-4GSS5C0J-E, M4MS-4GSSXC0J-E, M4US-8GSSW50J-E, M4CS-4GSSL50J-E, M4CS-4GSSL5RG-E, M4CS-4GSSLC0J-E, M4CS-4GSSLCRG-E, M4CS-4GSSSC0J-E, M4CS-4GSSSCRG-E, M4CS-8GSSM50J-E, M4CS-8GSSMC0J-E, M4CS-8GSSMCRG-E, M4CS-8GSSTC0J-E, M4CS-8GSSTCRG-E, M4DS-4GSSP50J-E, M4DS-4GSSP5RG-E, M4DS-4GSSPC0J-E, M4DS-4GSSPCRG-E, M4DS-8GSSQC0J-E, M4DS-8GSSQCRG-E, M4MS-8GSSYC0J-E, M4RS-4GSSA50J-E, M4RS-4GSSA5RG-E, M4RS-4GSSC50J-E, M4RS-4GSSC5RG-E, M4RS-8GSSB50J-E, M4RS-8GSSB5RG-E, M4RS-8GSSD50J-E, M4RS-8GSSD5RG-E, M4SS-4GSS3C0J-E, M4US-4GSSJ50J-E, M4US-4GSSJ5RG-E, M4US-4GSSVC0J-E, M4US-4GSSVCRG-E, M4US-8GSSK50J-E, M4US-8GSSK5RG-E, M4US-8GSSWC0J-E, M4US-8GSSWCRG-E
Hinweis Dokument:	PCN 20022701-DDR4 2400 Samsung 512Mx8 E die IC Product Change Notice.pdf

Innodisk M4MS-8GS

PRODUKT-FEATURES

KONFIGURATION

PRODUKTPREIS

PRODUKTINFORMATIONEN

KONFIGURATIONEN

DataSheet

Innodisk M4MS-8GS1XC0J-B (EOL) (Achtung EOL: LTB 31.03.2022) Vollständiges Datenblatt anzeigen Datenblatt schliessen

Innodisk M4MS-8GSSYC0J-E (EOL) (Achtung EOL: LTB 31.05.2020) Vollständiges Datenblatt anzeigen Datenblatt schliessen

Innodisk M4MS-8GS1XC0J-B (EOL) (Achtung EOL: LTB 31.03.2022) Vollständiges Datenblatt anzeigen Datenblatt schliessen Preis: bitte hier anmelden
MINI DIMM, DDR4, ECC, 8 GB, 1Gx8, -, 1.2V
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS
		IC Organization		1Gx8
		Bestückung		Single-Rank
		Die Version		B
		PCB S/N		X
Innodisk M4MS-8GSSYC0J-E (EOL) (Achtung EOL: LTB 31.05.2020) Vollständiges Datenblatt anzeigen Datenblatt schliessen Preis: bitte hier anmelden
MINI DIMM, DDR4, ECC, 8 GB, 512Mx8, -, 1.2V
System	Speicher	tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS
		IC Organization		512Mx8
		Bestückung		Dual-Rank
		Die Version		E
		PCB S/N		Y