Innodisk M4RS-AGS1D5

M4RS-AGS1D5RG-B

DDR4

Produkt ist EOL (End Of Life)!

PRODUKT-FEATURES

// DIMM
// DDR4
// 16 GB
// 1Gx8
// 2133 MT/s
// 1.2V

KONFIGURATION

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Standardkonfiguration

PRODUKTPREIS

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Lieferzeit: auf Anfrage

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PRODUKTINFORMATIONEN

Basismodul: Innodisk M4RS-AGS1D5

Allgemein
	SKU / Artikelnummer			M4RS-AGS1D5M4RS-AGS1D5RG-B
Produktgrunddaten
	Hersteller			Innodisk
System
	Speicher	Aufbau		288 Pin DIMM DDR4
		Memory Type		DDR4
		DIMM Type		Registered DIMM
		IC Data Rate		2400 MHz
		Kapazität		16 GB
		IC Brand		Samsung
		IC Organization		1Gx8
		PCB S/N		D
		Grade		Wide Temperature -40~+85°C
		CL		15
		DIMM Datarate		DDR4-2133 MT/s
		Die Version		B
		ECC		wird nicht unterstützt
		Bestückung		Dual-Rank
		tREFI Parameter 1	Average Periodic Refresh Interval	7.8 µS
			Temperaturbereich	-40°C ~ 85°C
Stromversorgung
	Eingangsspannung			1.2V
Mechanik / Umgebung
	Temperatur	Betrieb		-40° bis 85°C
		Lagerung		-50° bis 100°C
	Relative Luftfeuchtigkeit	Betrieb		10 bis 90%, nicht kondensierend
		Lagerung		5 bis 95%, nicht kondensierend
	Abmaße	Formfaktor		DIMM
		Tiefe		133 mm
		Höhe		19 mm
Zertifikate / Konformitäten
	CE			Ja
	RoHS konform			Ja

End of Life (EOL)

Key Characteristics of the Change: Due to supply condition, Innodisk hereby to announce the product change plan for all of DDR4 2400 Samsung 1Gx8 B die IC assembled modules Description: Innodisk is going to process DDR4 2400 Samsung 1Gx8 B die IC product termination and running change to DDR4 2666 Samsung 1Gx8 C die IC product series. Include products below: DDR4 2400/2133 1Gx8 8GB & 16GB DRAM Modules
Revision:	21121501
Revision date:	17. Dezember 2021
Last purchase date:	31. März 2022
Last shipping date:	30. Juni 2022
Betroffene Produkte:	M4CS-8GS1L50J-B, M4CS-8GS1L5RG-B, M4CS-8GS1LC0J-B, M4CS-8GS1LCRG-B, M4CS-8GS1SC0J-B, M4CS-8GS1SCRG-B, M4CS-AGS1M50J-B, M4CS-AGS1M5RG-B, M4CS-AGS1MC0J-B, M4CS-AGS1MCRG-B, M4CS-AGS1TC0J-B, M4CS-AGS1TCRG-B, M4DS-8GS1PC0J-B, M4DS-8GS1PCRG-B, M4DS-AGS1Q50J-B, M4DS-AGS1Q5RG-B, M4DS-AGS1QC0J-B, M4DS-AGS1QCRG-B, M4MS-8GS1XC0J-B, M4RS-8GS1A50J-B, M4RS-8GS1A5RG-B, M4RS-8GS1C50J-B, M4RS-8GS1C5RG-B, M4RS-8GS1CC0J-B, M4RS-8GS1CCRG-B, M4RS-AGS1B50J-B, M4RS-AGS1B5RG-B, M4RS-AGS1D50J-B, M4RS-AGS1D5RG-B, M4RS-AGS1DC0J-B, M4RS-AGS1DCRG-B, M4RS-BGS3G50J-B, M4RS-BGS3G5RG-B, M4SS-8GS13C0J-B, M4US-4GSX150J-B, M4US-4GSX15RG-B, M4US-4GSX1C0J-B, M4US-4GSX1CRG-B, M4US-8GS1J50J-B, M4US-8GS1J5RG-B, M4US-8GS1VC0J-B, M4US-8GS1VCRG-B, M4US-AGS1K50J-B, M4US-AGS1K5RG-B, M4US-AGS1WC0J-B, M4US-AGS1WCRG-B
Hinweis Dokument:	[PCN_21121501] DDR4 product change notice from Samsung 2400 1Gx8 B die IC to Samsung 2666 1Gx8 C die IC .pdf
Product Change Notification (PCN)

In an effort to expand Innodisk's DRAM product lines universal usability in applications and devices, Innodisk hereby announces a product change for DRAM modules that are ECC DIMM / RDIMM all product series of standard part numbers, and the DDR4 2933/3200 4/8GB 1 Rank SODIMM W/T of standard part numbers. The customized part numbers would not be impacted.
Revision:	20113001
Revision date:	1. Dezember 2020
Last purchase date:	1. März 2021
Last shipping date:	1. Juni 2021
Betroffene Produkte:	M4MS-AGS1YC0J-B, M4CS-8GS1L50J-B, M4CS-8GS1L5RG-B, M4CS-8GS1LC0J-B, M4CS-8GS1LCRG-B, M4CS-8GS1SC0J-B, M4CS-8GS1SCRG-B, M4CS-AGS1M50J-B, M4CS-AGS1M5RG-B, M4CS-AGS1MC0J-B, M4CS-AGS1MCRG-B, M4CS-AGS1TC0J-B, M4CS-AGS1TCRG-B, M4D0-4GSSPWEM, M4D0-4GSSPWIK, M4D0-4GSSPWRG, M4D0-4GSSPWSJ, M4D0-4GSSPWUN, M4D0-8GM1PWIK, M4D0-8GM1PWRG, M4D0-8GM1PWSJ, M4D0-8GS1PWEM, M4D0-8GS1PWIK, M4D0-8GS1PWRG, M4D0-8GS1PWSJ, M4D0-8GS1PWUN, M4D0-8GSSQWEM, M4D0-8GSSQWIK, M4D0-8GSSQWRG, M4D0-8GSSQWSJ, M4D0-8GSSQWUN, M4D0-AGS1QWEM, M4D0-AGS1QWIK, M4D0-AGS1QWRG, M4D0-AGS1QWSJ, M4D0-AGS1QWUN, M4DI-4GSSPC0K-F, M4DI-4GSSPCRG-F, M4DI-4GSSPCSJ-F, M4DI-4GSSPW0K-F, M4DI-4GSSPWRG-F, M4DI-4GSSPWSJ-F, M4DI-8GS1PC0K-C, M4DI-8GS1PCRG-C, M4DI-8GS1PCSJ-C, M4DI-8GS1PW0K-C, M4DI-8GS1PWRG-C, M4DI-8GS1PWSJ-C, M4DI-8GSSQC0K-F, M4DI-8GSSQCRG-F, M4DI-8GSSQCSJ-F, M4DI-8GSSQW0K-F, M4DI-8GSSQWRG-F, M4DI-8GSSQWSJ-F, M4DI-AGS1QC0K-C, M4DI-AGS1QCRG-C, M4DI-AGS1QCSJ-C, M4DI-AGS1QW0K-C, M4DI-AGS1QWRG-C, M4DI-AGS1QWSJ-C, M4DI-BGS2QC0K-A, M4DS-8GS1PC0J-B, M4DS-8GS1PCRG-B, M4DS-AGS1Q50J-B, M4DS-AGS1Q5RG-B, M4DS-AGS1QC0J-B, M4DS-AGS1QCRG-B, M4MS-8GS1XC0J-B, M4RS-8GS1A50J-B, M4RS-8GS1A5RG-B, M4RS-8GS1C50J-B, M4RS-8GS1C5RG-B, M4RS-8GS1CC0J-B, M4RS-8GS1CCRG-B, M4RS-AGS1B50J-B, M4RS-AGS1B5RG-B, M4RS-AGS1D50J-B, M4RS-AGS1D5RG-B, M4RS-AGS1DC0J-B, M4RS-AGS1DCRG-B
Hinweis Dokument:	PCN 20113001- DDR4 EEPROM (with Thermal Sensor) product change notice.pdf